Spansion to make quad Mirror Bit flash memory by 2007
Following the demonstration of four-bit-per cell flash memory silicon that was produced under MirrorBit quad technology, Spansion said it plans to move production to 90 nm by year-end of this year with a maximum density range of up to 2 Gbit. The design is expected to shrink to 65 nm in 2007, the company said.
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