Samsung said that it has begun sample production of fully buffered, dual in-line memory modules (FB-DIMM) based on DDR2 technology. The technology is designed to increase memory density and bandwidth of registered DIMMs to improve data processing speeds.

In contrast to DDR2, FB-DIMMs add an Advanced Memory Buffer (AMB) chip to each memory module to enable the use of high- and low-speed interfaces. The buffer can generate speeds from 3.2 to 4.8 Gbit per second. The maximum speed is double the speed of a DDR2-400 registered DIMM, when utilizing DDR2-800 components, according to Samsung.

Samsung said it will initially offer 512 MByte and 1 GByte FB-DIMM samples.

Other manufacturers are also gearing up to ship FB-DIMMs. For example, Infineon displayed at IDF 512 MByte and 1 GByte FB-DIMMs with versions that were equipped with a newly developed heat spreader that promises users 10 percent greater efficiency than common solutions (see picture). (THG)