Nanotech developers prepare for IEDM

A number of the participants at the International Electron Devices Meeting this December have pre-announced nanotechnological breakthroughs that will be highlighted alongside traditional silicon technologies. A Japanese team has built an elemental circuit using single-electron transistors. Another group has utilized nanocrystals on a floating gate, successfully replacing capacitors in the creation of non-volatile memory. Researchers from U.C. Berkeley promise to report on a 20 nanometer transistor gate, the smallest built yet, while other researchers have used nanotechnologies to make the fastest transistor ever built.

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