Low-Voltage 64 Mbit Flash Memory from STM

STMicroelectronics just let us know about its new M58CR064, a 64 Mbit Flash memory chip, organized as 4 Mbitsx16 bits, that operates at 1.8V. The M58CR064 includes burst mode, dual bank, fast read and programming operations, and block-level erasing and locking, which STM thinks should make it a good fit for wireless handset and other portable apps. The M58CR064 allows both asynchronous and synchronous read operations. In synchronous burst mode, data can be read on every cycle of a 54MHz clock. The chip is available with random access times of 85 or 100ns. The M58CR064 lets you simultaneously program either two or four adjacent 16-bit words in any one bank and has a separate programming voltage pin that connects a 12V source. While the M58CR064 operates from a 1.8V power supply, it accepts driving the I/O pin in the range between 1.65 to 3.3V, allowing connection to 3V host processors. As a dual bank device - one bank contains 48 Mbits; the other, 16 Mbits - the M58CR064 can program or erase data in one bank while reading data in the other. The M58CR064 comes in a TFBGA5 package, organized as 8-by-7 balls on a 0.75mm pitch. Samples of the M58CR064 are available now, with volume quantities available during Q1 2002.