Intel touts 30nm transistor breakthrough

Intel Corp. researchers have built a CMOS transistor, measuring 30 nanometers in size and three atom layers thick. The technology will enable, in five to ten years, the construction of chips with 400 million transistors running at 10GHz on less than 1V. It would take more than 100,000 of the 30nm gates stacked to equal the thickness of one sheet of paper. The technology uses Extreme Ultra Violet (EUV) lithography and will be used in 0.07 micron technology to produce PCs with the power of current mainframes.

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