Intel currently demonstrates its next-generation 65-nanometer semiconductor process and claims that it is first rolling out the industry’s first high-volume 90nm production of SRAMs.

Intel expects to ramp up the 65 nm process in 2005 with products, including processors, also becoming available within this year. At this time, Intel said that it has fabricated fully functional 4 Mbit static RAMs (SRAMs) with "ultra-small" memory cells. Smaller cells mean that processors can have larger caches that improve performance. The SRAM cells have a solid noise margin down to 0.7 volts, which indicates very robust circuit operation.

In August of last year, the company announced that it built a fully functional 70 Mbit SRAM chip in 65 nm process technology. According to Intel, ten million of these transistors could fit on the tip of a ballpoint pen.

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