Infineon introduces silicon-based low noise amplifiers for UMTS/HSxPA and WLAN applications
Infineon Technologies has released commercial silicon-based low noise amplifier (LNA) products that the company said offer a better performance-price ratio compared to Gallium Arsenide (GaAs) alternatives while also helping mobile phone suppliers to comply to 3GPP regulations. At the 3GSM World Congress 2007 in Barcelona, Infineon announced availability of its latest LNAs, the BGA700L16 and the BGA734L16, which are based on a combination of Infineon’s proprietary silicon germanium carbon (SiGe :C) process with an additional feature of low resistance on-chip ground contact.
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