IBM Peers Into CMOS Future At IEDM
IBM Corp. researchers have found a way to sharply boost PFET transistor performance, using epitaxial deposition techniques to deposit silicon with a 110 crystal orientation only where the PFET transistors are built, resulting in a sharp increase in hole mobility. "The technique combines conventional 100-orientation silicon for the NFETs with 110-orientation lattice structures, deposited epitaxially, for the PFETs."
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