Chartered offers MoSys embedded memory technology at 0.13-micron node
Singapore-based Chartered Semiconductor Manufacturing signed an agreement with MoSys to offer MoSys’ 1T-SRAM-Q technology on Chartered’s 0.13-micron process, according to its press release dated November 3.
More here at DigiTimes
SiS to produce Xbox I/O chips at UMC
- Proxim to introduce 802.16a wireless devices in mid-2004
- Asustek aims for 20% rise for motherboards, 30% for notebooks in 2004
- BenQ launches new own-brand handset - the M775C
- ATI and Samsung sign MOU for digital TV chips
- ATI's Xilleon 225 powers Roku HD1000 media player
- Elpida ships 2GB DDR2 modules
- 8.5GB DVD+R discs, drives to ship April '04
- Virgin Mobile Launches MTV-Branded Cell Phone
- Microsoft launches mobile Voice Command
Desxcape Monitor Turns Into Wireless Work Station
- Intel Loses Xbox Contract to IBM
- Novell to Buy SuSE Linux for $210 Million
- Flying Lab Unveils Its Ships from it upcoming MMORPG
- World's smallest motorcycle weighs 2.4 pounds
- Taiwan launches virtual computer show
- Canon's new projector focuses on presentations
- Epson Introduces new photo printer
- Intel to bring out the metal at 45 nanometers
- Corning, IBM team for optical interconnect development
Sponsored
See more
Latest news
Miscellaneous Previous news
Partners
