The collaboration between IBM, Infineon Technologies, Chartered Semiconductor and Samsung Electronics on 45nm production process has progressed, with the first tape out proceeding at IBM’s 12" fab, and other members of the alliance stating they are on schedule to introduce their own production by end of 2006, according to officials from the companies at a recent Chartered technology forum in Santa Clara. The four partners announced their success on 45nm development in late August of 2006 with the first 45nm-made silicon-functional circuits fabricated at IBM’s East Fishkill, New York fab, and officials now indicated that tape-out at the fab has started.

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