Promos 1 Gbit DDR3 samples to be available in H1 2007
DRAM vendor ProMOS Technologies announced that its third 300 mm facility (Fab 4), which will be built in Daya Township, Taichung County, will mainly operate as a DRAM fab, but the company does not reject the idea to allocate some capacity there for manufacturing NAND flash memory chips.
This Wednesday, Promos held a groundbreaking ceremony for the new fab, which is expected to deploy 60nm stack technology in mass production by the second half of 2008, according to company chairman and president ML Chen.
More here at DigiTimes.
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